Study of hot wire chemical vapor deposition technique for silicon thin film

Micro and multi-crystalline silicon thin films have been prepared in the growing rate of more than 10 Å/S by hot wire (HW) CVD. The crystallite size of the films ranges from 0.1 to 1 μm. The effects of processing parameters on the property of the films have been systematically studied. The energy gap ranges from 1.5 to 1.12 eV when substrate temperature changes from 250°C to 450°C. The conductivity of the doped films is as high as 10 (Ω cm)−1. An anomalous behavior of hot palladium wire in an atmosphere of silane at low pressure is reported and preliminarily explained. The reason why tungsten wire is easy to break during silicon thin film deposition by hot wire CVD is discussed.