Author/Authors :
Mathew، نويسنده , , Xavier and Pantoja Enriquez، نويسنده , , J. and Sebastian، نويسنده , , P.J. and Pattabi، نويسنده , , M. and Sanchez-Juarez، نويسنده , , A. and Campos، نويسنده , , J. and McClure، نويسنده , , J.C and Singh، نويسنده , , V.P.، نويسنده ,
Abstract :
The charge transport mechanism in a typical Au/CdTe Schottky diode has been investigated. Evidence for different types of charge transport at different temperature regions has been observed. The dominant transport mechanism in the 100–300 K region is identified as the Poole–Frenkel type. The activation energy of the trap level detected in the 100–300 K temperature range shows a voltage dependence. The transport mechanism changes at a characteristic temperature of about 270 K.
Keywords :
Electrodeposition , I–V , Poole–Frenkel conduction , Schottky conduction , CdTe
