Title of article
Simulation of the Postexposure Bake Process of Chemically Amplified Resists by Reaction–Diffusion Equations
Author/Authors
Li، نويسنده , , Tsung-Lung، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
16
From page
348
To page
363
Abstract
In this work, a time-dependent postexposure bake (PEB) simulator is presented by solving a set of reaction–diffusion equations modeling the deprotection reaction of polymers and the diffusion of acids in chemically amplified resists. The simulator is time-dependent in the sense that model parameters including both reaction parameters and diffusion coefficients are treated as time-dependent functions in the entire course of the PEB process. The alternating direction implicit method is utilized to iteratively solve the set of reaction–diffusion equations. An error-control scheme is devised for automatic time-stepping. This PEB simulator is, hence, capable of simulating the effects of the temperature–time history of a wafer. It is then applied to simulate the resist profiles of line/space patterns and contact holes.
Journal title
Journal of Computational Physics
Serial Year
2001
Journal title
Journal of Computational Physics
Record number
1476737
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