Title of article
Preparation of boron-doped ZnO thin films by photo-atomic layer deposition
Author/Authors
Yamamoto، نويسنده , , Y. David Saito، نويسنده , , K. and Takahashi، نويسنده , , K. and Konagai، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
125
To page
132
Abstract
Low-resistivity and high-stability ZnO films were grown by photo-atomic layer deposition (photo-ALD) technique using boron as an n-type dopant. The effect of the UV-irradiation was quantitatively evaluated by controlling the intensity of the incident light. The growth mechanism of ZnO films under UV-irradiation was investigated by varying the UV-irradiation period. In addition to the UV-irradiation, n-type doping using B2H6 was carried out. By optimizing the introduction cycle of B2H6, the lowest resistivity of 6.9×10−4 Ω cm was obtained. Furthermore, ZnO films grown by photo-ALD exhibit excellent stability in the electrical properties under air exposure.
Keywords
Photo-atomic layer deposition , Transparent conductive oxide , ZNO
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476742
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