Title of article
Development of thin film solar cell based on Cu2ZnSnS4 thin films
Author/Authors
Katagiri، نويسنده , , Hironori and Saitoh، نويسنده , , Kotoe and Washio، نويسنده , , Tsukasa and Shinohara، نويسنده , , Hiroyuki and Kurumadani، نويسنده , , Tomomi and Miyajima، نويسنده , , Shinsuke، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
141
To page
148
Abstract
Cu2ZnSnS4 (hereafter CZTS) thin films were successfully formed by vapor-phase sulfurization of precursors on a soda lime glass substrate (hereafter SLG) and a Mo-coated one (hereafter Mo-SLG). From the optical properties, we estimate the band-gap energy of this thin film as 1.45–1.6 eV which is quite close to the optimum value for a solar cell. By using this thin film as an absorber layer, we could fabricate a new type of thin film solar cell, which was composed of Al/ZnO:Al/CdS/CZTS/Mo-SLG. The best conversion efficiency achieved in our study was 2.62% and the highest open-circuit voltage was 735 mV. These device results are the best reported so far for CZTS.
Keywords
Sulfurization , characterization , Cu2ZnSnS4 , Thin films
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476749
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