Title of article :
Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization
Author/Authors :
Morikawa، نويسنده , , D. Kawama، نويسنده , , Y and Matsuno، نويسنده , , Y and Hamamoto، نويسنده , , S and Imada، نويسنده , , K and Ishihara، نويسنده , , T and Kojima، نويسنده , , K and Ogama، نويسنده , , T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The Via-hole Etching for the Separation of Thin films (VEST) process has been developed based on SOI technology of zone-melting recrystallization (ZMR). In order to obtain high-quality thin-film polycrystalline Si, it was found that the thickness of recrystallized Si film is an important factor. On the other hand, we have newly investigated the module process for the VEST cells. As a result, we have achieved 13.1% efficiency (Voc: 5.257 V, Isc: 3.43 A, FF:0.6695) with a module size of 924.2 cm2.
Keywords :
Thin-film polycrystalline Si , Zone-melting recrystallization , SOI
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
