Title of article
Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization
Author/Authors
Morikawa، نويسنده , , D. Kawama، نويسنده , , Y and Matsuno، نويسنده , , Y and Hamamoto، نويسنده , , S and Imada، نويسنده , , K and Ishihara، نويسنده , , T and Kojima، نويسنده , , K and Ogama، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
261
To page
268
Abstract
The Via-hole Etching for the Separation of Thin films (VEST) process has been developed based on SOI technology of zone-melting recrystallization (ZMR). In order to obtain high-quality thin-film polycrystalline Si, it was found that the thickness of recrystallized Si film is an important factor. On the other hand, we have newly investigated the module process for the VEST cells. As a result, we have achieved 13.1% efficiency (Voc: 5.257 V, Isc: 3.43 A, FF:0.6695) with a module size of 924.2 cm2.
Keywords
Thin-film polycrystalline Si , Zone-melting recrystallization , SOI
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476788
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