Title of article :
Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells
Author/Authors :
Saitoh، نويسنده , , T. and Wang، نويسنده , , X. and Hashigami، نويسنده , , H. and Abe، نويسنده , , T. and Igarashi، نويسنده , , T. and Glunz، نويسنده , , S. and Rein، نويسنده , , S. and Wettling، نويسنده , , W. and Yamasaki، نويسنده , , I. and Sawai، نويسنده , , H. and Ohtuka، نويسنده , , H. and Warabisako، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
9
From page :
277
To page :
285
Abstract :
An international joint research has been conducted to investigate light degradation of low-resistivity Si CZ wafers and also to provide practical solutions to suppress the degradation. Ten kinds of CZ, MCZ and FZ Si wafers were evaluated under AM1.5 irradiation and processed to fabricate solar cells using low- and high-temperature processes. Lifetime degradation was suppressed using MCZ Si wafers with low oxygen content and Ga-doped CZ wafers with high oxygen content. In addition, high-temperature oxidation was also effective to reduce light degradation remarkably. No degradation of solar cells could be realized by using B-doped MCZ and Ga-doped CZ wafers combined with a high-temperature processing.
Keywords :
solar cells , Ga-doped CZ , MCZ , Light degradation
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2001
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1476797
Link To Document :
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