Title of article
UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells
Author/Authors
A. and Fourmond، نويسنده , , Erwann and Dennler، نويسنده , , Gilles and Monna، نويسنده , , Rémi and Lemiti، نويسنده , , Mustapha and Fave، نويسنده , , Alain and Laugier، نويسنده , , André، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
297
To page
301
Abstract
This work intends to investigate the effectiveness of silicon nitride layers (SiNx : H) deposited by photochemical vapor deposition (UVCVD) for antireflection and passivation purposes when applied to electromagnetically casted silicon solar cells (EMC). Effective reflectivity of 10.8% is achieved, as well as 66% increase of minority carrier lifetime.
Keywords
Multicrystaline solar cell , Silicon nitride , EMC , UVCVD
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476806
Link To Document