Experimental evidence of very high open-circuit voltages of inversion–layer silicon solar cells

In this paper the first experimental evidence of the high Voc-potential of inversion-layer silicon solar cells is given. Minority-carrier lifetime measurements on inversion-layer emitters have been performed and the diffused p–n contact of PN-IL silicon solar cells has been optimized for high open-circuit voltages. PN-IL silicon solar cells with open-circuit voltages of 693 mV have been fabricated on 0.2 and 0.5-Ω cm FZ p-Silicon wafers. These values are the highest ever reported Vocʹs for inversion-layer silicon solar cells on p-Silicon. This demonstrates that inversion-layer silicon solar cells exhibit a similar potential for achieving high open-circuit voltages as silicon solar cells with a diffused p–n junction.