• Title of article

    Surface passivation in high efficiency silicon solar cells

  • Author/Authors

    Wenham، نويسنده , , S.R and Zhao، نويسنده , , J and Dai، نويسنده , , X and Wang، نويسنده , , A and Green، نويسنده , , M.A، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    8
  • From page
    377
  • To page
    384
  • Abstract
    Surface passivation for crystalline silicon solar cells is particularly important for devices with open-circuit voltages in excess of 650 mV. Thick passivating thermal oxides, originally developed for use with buried contact solar cells, are shown to produce the most effective and stable surface passivation particularly in conjunction with lightly phosphorus diffused surfaces. However, for improved optical performance, antireflection coatings are only effective with surface oxide thicknesses reduced to 100–200 Å. Thinner passivating oxides cause significant voltage loss, most of which can be recovered through hydrogen passivation. Throughout this study, variation in surface passivation approaches has produced open-circuit voltages ranging from 620 mV to record voltages of 720 mV.
  • Keywords
    High-efficiency photovoltaics , Surface passivation , Silicon solar cells , Floating junction
  • Journal title
    Solar Energy Materials and Solar Cells
  • Serial Year
    2001
  • Journal title
    Solar Energy Materials and Solar Cells
  • Record number

    1476837