Title of article
Surface passivation in high efficiency silicon solar cells
Author/Authors
Wenham، نويسنده , , S.R and Zhao، نويسنده , , J and Dai، نويسنده , , X and Wang، نويسنده , , A and Green، نويسنده , , M.A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
377
To page
384
Abstract
Surface passivation for crystalline silicon solar cells is particularly important for devices with open-circuit voltages in excess of 650 mV. Thick passivating thermal oxides, originally developed for use with buried contact solar cells, are shown to produce the most effective and stable surface passivation particularly in conjunction with lightly phosphorus diffused surfaces. However, for improved optical performance, antireflection coatings are only effective with surface oxide thicknesses reduced to 100–200 Å. Thinner passivating oxides cause significant voltage loss, most of which can be recovered through hydrogen passivation. Throughout this study, variation in surface passivation approaches has produced open-circuit voltages ranging from 620 mV to record voltages of 720 mV.
Keywords
High-efficiency photovoltaics , Surface passivation , Silicon solar cells , Floating junction
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476837
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