Title of article
Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films
Author/Authors
Bourdais، نويسنده , , S and Beaucarne، نويسنده , , G and Slaoui، نويسنده , , A and Poortmans، نويسنده , , J and Semmache، نويسنده , , B and Dubois، نويسنده , , C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
487
To page
493
Abstract
In this paper, the emitter formation on polycrystalline silicon (with grain size of 0.5–10 μm) deposited by chemical vapour deposition (CVD) on foreign substrates (thermal SiO2 and mullite ceramic) is studied. Phosphorus doping efficiency by POCl3 diffusion, APCVD+drive-in diffusion, and also rapid-thermal diffusion (RTD) from spin-on doping (SOD) sources were compared. For the first time, we report on photovoltaic results obtained on RTD-diffused emitters on pc-Si active layers deposited by rapid-thermal CVD, thus opening the way to an all rapid-thermal process for solar cell fabrication.
Keywords
Phosphorus diffusion , Polycrystalline silicon
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476882
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