Title of article
The influence of doping on charge carrier transport in a-Si : H
Author/Authors
Herm، نويسنده , , M. and von Aichberger، نويسنده , , S and Kunst، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
195
To page
201
Abstract
The influence of doping on the (opto)electronic properties of a-Si : H films is investigated by transient photoconductivity and photo-induced absorption measurements. The decay rate of the majority charge carrier decreases with doping due to fast minority carrier trapping already active at low doping levels. The transition from electron to hole conduction is observed at 3 ppm B2H6. At high doping levels the recombination rate becomes faster by recombination via doping-induced defects.
Keywords
photoconductivity , Charge carrier transport , a-Si:H
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477017
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