High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane

A new process, hot wire cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low-temperature and high deposition rate. In the hot wire cell method, reactant gases are decomposed by a heated tungsten filament. Polycrystalline silicon films can be deposited at deposition rates of 1.2 nm/s for mono-silane (SiH4) and 2.8 nm/s for disilane (Si2H6). By using disilane as a reactant gas, it is possible to achieve a high deposition rate without any change in the quality of the films.