Author/Authors :
Itoh، نويسنده , , T and Yamamoto، نويسنده , , K and Harada، نويسنده , , H and Yamana، نويسنده , , N and Yoshida، نويسنده , , N and Inouchi، نويسنده , , H and Nonomura، نويسنده , , S and Nitta، نويسنده , , S، نويسنده ,
Abstract :
The integrated intensity of the IR absorption mode near 640 cm−1 is directly proportional to hydrogen density while that around 2000–2100 cm−1 is not proportional to this. The crystallinity of a sample prepared by hot-wire assisted PECVD (HWAPECVD) is higher than that by PECVD. The hydrogen density of a sample prepared by HWAPECVD is smaller than that by PECVD. The mode near 840 cm−1 in IR absorption spectrum for a sample prepared by HWAPECVD is smaller than that by PECVD. The properties and the role of hydrogen in μc-Si:H are discussed.
Keywords :
Hydrogen radical , Hydrogen density , ?c-Si:H , (Si-H2)n chain structure , Hot-wire assisted PECVD
