Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

It is found that one of the dominant parameters in determining the dangling-bond (DB) density in hydrogenated amorphous silicon (a-Si:H) films prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, is the catalyzer-surface area. a-Si:H films with an initial DB density of 4×1015 cm−3 and a saturated one after light soaking of 3×1016 cm−3 are prepared by Cat-CVD with a deposition rate of 11 Å/s. “Catalytic plate” instead of the conventional wire is also proposed in order to suppress the heat radiation from the catalyzer while keeping the catalyzer surface area constant.