Title of article
High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD
Author/Authors
Endo، نويسنده , , Koji and Isomura، نويسنده , , Masao and Taguchi، نويسنده , , Mikio and Tarui، نويسنده , , Hisaki and Kiyama، نويسنده , , Seiichi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
283
To page
288
Abstract
A high growth rate (35 Å/s) and a high crystalline volume fraction (73%) were achieved in micro-crystalline silicon (μc-Si) films prepared by Helicon wave plasma CVD. Its high plasma density and low ion energy seem to promote the high growth rate. It was also found that (1 1 1) oriented μc-Si films can be obtained by reducing the self-bias voltage, probably due to less ion damage to the growing surfaces.
Keywords
Crystalline volume fraction , Micro-crystalline silicon , Helicon wave plasma , Growth rate
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477058
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