Title of article :
Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques
Author/Authors :
Ohkawa، نويسنده , , George K. H. Shimizu، نويسنده , , S. and Sato، نويسنده , , H. and Komaru، نويسنده , , T. and Futako، نويسنده , , W. and Kamiya، نويسنده , , T. and Fortmann، نويسنده , , C.M and Shimizu، نويسنده , , I.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Stability against light soaking was studied for amorphous silicon (a-Si:H) solar cells using three different i-layers; (a) device-quality a-Si:H (standard a-Si:H) with bandgap of 1.75 eV, (b) narrow bandgap (1.55 eV) a-Si:H fabricated by Ar* chemical annealing and (c) a-Si:H(Cl) fabricated from SiH2Cl2. Both the narrow bandgap a-Si:H and the a-Si:H(Cl) solar cells showed much improved stability than that of the standard a-Si:H solar cells: e.g., fill factor of the narrow bandgap a-Si:H cell only slightly decreased from 56% to 53%, while that of the standard a-Si:H cell degraded from 62% to 51%. In addition, mobility–lifetime products of the a-Si:H(Cl) cell also exhibited improved stability than that of the standard a-Si:H solar cell.
Keywords :
Stability against light soaking , Ar* chemical annealing , Narrow bandgap amorphous silicon , Electron cyclotron resonance hydrogen plasma , SiH2Cl2
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
