Title of article
Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6
Author/Authors
Goto، نويسنده , , Shu and Ueda، نويسنده , , Takashi and Yamagishi، نويسنده , , Chouho، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
631
To page
636
Abstract
A new type of thermal cleaning for Si surfaces, using Si2H6, has been developed for growing GaAs buffer layers with an A-step surface on an Si substrate by metaloraganic vapor-phase epitaxy (MOVPE). This process made it possible, for the first time, to grow an A-step surface InGaP solar cell structure on an Si substrate with good surface morphology. An improvement in photovoltaic conversion efficiency has been achieved by this newly developed process.
Keywords
A-step surface , Si2H6 , Thermal cleaning , InGaP solar cells , Si substrates
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477193
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