Progress in large-area Cu(InGa)Se2-based thin-film modules with a Zn(O,S,OH)x buffer layer

Applying basically the same innovative and robust fabrication technologies which, for the first time, led to the achievement of remarkably high efficiency of 14.2% at an aperture area of 51.7 cm2 with a Zn(O,S,OH)x buffer layer, the following goals have been targeted: (1) 13% efficiency on a 30 cm×30 cm module and (2) establishment of the fabrication technologies to attain 140 yen/Wp in the annual production capacity of 100 MWp/a. The main focus is currently on the technology development (1) to increase the Voc related to the CIGS absorber and (2) to improve the Jsc related to the DC-sputtered ZnO window layer with a multilayered structure. This contribution well explains the status and strategy of Showa Shell Sekiyu K.K. on the R&D of CIGS-based thin-film modules to achieve the above two goals by the end of FY2000.