Author/Authors :
Neisser، نويسنده , , A. and Hengel، نويسنده , , I. D. Klenk، نويسنده , , R. and Matthes، نويسنده , , Th.W. and ?lvarez-Garc??a، نويسنده , , J. and Pérez-Rodr??guez، نويسنده , , A. and Romano-Rodriguez، نويسنده , , A. and Lux-Steiner، نويسنده , , M.-Ch.، نويسنده ,
Abstract :
Thin film CuInS2:Ga solar cell absorber films were prepared by sequential evaporation of Cu–In–Ga precursors and sulfurization in sulfur vapor. The depth distribution of Ga was found to be highly inhomogeneous caused by CuGaS2 phase segregation at the back contact. Depending on overall Ga content and sulfurization temperature a quaternary CuGaxIn1−xS2 compound formed exhibiting a shift in absorber lattice constant and band gap. Micro Raman measurements showed that crystal quality was also affected by Ga. Open-circuit voltages well above 800 mV were achieved while sustaining high fill factors of 71%.
Keywords :
CuInS2 , GA , Raman , Thin films
