Title of article :
ILGAR – A novel thin-film technology for sulfides
Author/Authors :
Muffler، نويسنده , , H.-J and Fischer، نويسنده , , Ch.-H and Diesner، نويسنده , , K and Lux-Steiner، نويسنده , , M.C، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
7
From page :
121
To page :
127
Abstract :
Ion layer gas reaction (ILGAR), a novel thin-film technology for sulfides is introduced. Its peculiarity is the low-temperature conversion of a solid metal salt precursor into a sulfide compound by reaction with gaseous H2S. The capability of this technique is demonstrated by the preparation of CdS, which is either of cubic or hexagonal polycrystalline structure. Spectralphotometric measurements reveal a high optical band gap of 2.78 eV. A subsequent annealing process reduces this value to 2.45 eV. This fact as well as XRD results indicate a nanocrystalline structure of the ILGAR-deposited CdS thin films.
Keywords :
Size-quantization effect , Nanocrystallite , CDS , Deposition technique
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2001
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1477253
Link To Document :
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