Title of article
ILGAR – A novel thin-film technology for sulfides
Author/Authors
Muffler، نويسنده , , H.-J and Fischer، نويسنده , , Ch.-H and Diesner، نويسنده , , K and Lux-Steiner، نويسنده , , M.C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
121
To page
127
Abstract
Ion layer gas reaction (ILGAR), a novel thin-film technology for sulfides is introduced. Its peculiarity is the low-temperature conversion of a solid metal salt precursor into a sulfide compound by reaction with gaseous H2S. The capability of this technique is demonstrated by the preparation of CdS, which is either of cubic or hexagonal polycrystalline structure. Spectralphotometric measurements reveal a high optical band gap of 2.78 eV. A subsequent annealing process reduces this value to 2.45 eV. This fact as well as XRD results indicate a nanocrystalline structure of the ILGAR-deposited CdS thin films.
Keywords
Size-quantization effect , Nanocrystallite , CDS , Deposition technique
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477253
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