Title of article :
Electrical properties of the Cu(In,Ga)Se2/ MoSe2/Mo structure
Author/Authors :
Kohara، نويسنده , , Naoki and Nishiwaki، نويسنده , , Shiro and Hashimoto، نويسنده , , Yasuhiro and Negami، نويسنده , , Takayuki and Wada، نويسنده , , Takahiro، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
We investigated the electrical properties of the Cu(In,Ga)Se2/MoSe2/Mo structure. CIGS/Mo heterocontact including the MoSe2 layer is not Schottky-type but a favorable ohmic-type contact by the evaluation of dark I–V measurement at low temperature. A characteristic peak at 870 nm is observed in differential quantum efficiency of a solar cell with a CIGS thickness of 0.5 μm. This peak is considered with relating to the absorption of the MoSe2 layer. The band gap of MoSe2 is calculated to be 1.41 eV from the absorption peak. The band diagram is discussed on the basis of the electrical point of view.
Keywords :
MoSe2 , Wide band gap , ohmic , Differential quantum efficiency
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
