Title of article
Cu(In,Ga)Se2 thin-film solar cells with an efficiency of 18%
Author/Authors
Negami، نويسنده , , Takayuki and Hashimoto، نويسنده , , Yasuhiro and Nishiwaki، نويسنده , , Shiro، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
331
To page
335
Abstract
An efficiency of over 18% have been achieved in Cu(In,Ga)Se2 (CIGS) thin-film solar cells. Solar cell parameters were estimated for the cells with efficiencies of more and less than 18%. A diode quality factor n and forward current (saturated current) J0 of the cell with over 18% efficiency are lower than those with below 18% efficiency. This would be attributed to sufficient coverage of the CdS film with excellent uniformity as a buffer and/or window layer over the CIGS film because the process of CdS film formation was improved.
Keywords
Cu(In , Ga)Se2 , Thin film , Electric property
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477332
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