Cd-free buffer layers for CIGS solar cells prepared by a dry process

ZnSe buffer layers for Cu(ln,Ga)Se2/buffer/ZnO solar cells have been prepared by metal organic chemical vapor deposition (MOCVD). Using photoassisted MOCVD, deposition temperatures down to 265°C are possible. It is shown that deposition temperatures well below 300°C are essential as well as deposition times not much longer than 3 min. Higher temperatures and longer deposition times lead to absorber degradation. With optimized buffer deposition efficiencies of 11% have been obtained on CIGS absorbers from the Siemens pilot production line.