Author/Authors :
Litovchenko، نويسنده , , V.G. and Klyuis، نويسنده , , N.I. and Evtukh، نويسنده , , A.A. and Efremov، نويسنده , , A.A. and Sarikov، نويسنده , , A.V. and Popov، نويسنده , , V.G. and Kostylyov، نويسنده , , V.P. and Rasamakin، نويسنده , , Yu.V. and Haessler، نويسنده , , Ch. and Koch، نويسنده , , W.، نويسنده ,
Abstract :
New combined gettering and passivating procedures for solar cells prepared from multicrystalline silicon (mc-Si) have been considered. Passivation has been performed by (i) diamond-like carbon films deposition onto front or rear side of the wafers with following annealing, or (ii) hydrogen plasma treatments. Gettering region has been formed by deposition of Al film on specially prepared Si with developed surface. The advantages of such a gettering process in comparison with traditional gettering with Al are demonstrated. The improving influence of the treatments on diffusion length in mc-Si and efficiency of prepared solar cells have been found out. Physical mechanisms responsible for the observed effects of gettering and passivation are discussed.
Keywords :
Gettering , Diamond-like films , Developed surface , Multicrystalline silicon , Plasma treatments , Al layer
