Title of article
Comparison of phosphorus gettering for different multicrystalline silicon
Author/Authors
Boudaden، نويسنده , , J. and Monna، نويسنده , , R. and Loghmarti، نويسنده , , M. and Muller، نويسنده , , J.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
381
To page
387
Abstract
The influence of a rapid thermal treatment on multicrystalline silicon produced by ElectroMagnetic Casting process (Emix® and Sitix®) and by directional solidification (Polix®), are investigated and compared in this paper. We have studied bifacial diffusion of phosphorus in this multicrystalline silicon and its gettering effect on the minority carrier lifetime measured by the photoconductivity decay technique. The diffusion is carried out by using a tungsten lamps furnace (rapid thermal processing (RTP)). This study shows an important lifetime improvement of multicrystalline silicon material produced by cold crucible casting compared to directional solidification.
Keywords
Multicrystalline silicon , Electromagnetic casting process , Photoconductivity decay technique , Rapid thermal processing , Phosphorus gettering
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2002
Journal title
Solar Energy Materials and Solar Cells
Record number
1477926
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