A simple diborane-degradation model for controlling p-type doping of microcrystalline silicon

The preparation of p-type amorphous- or microcrystalline silicon often requires the use of a gas mixture containing diborane. Whereas the concentration of this gas in the process chamber is critical for the determination of the doping level, and thus of the properties, of resulting films, it is in practice very difficult to have a proper control of such a concentration owing to the degradation of diborane in the cylinder by polymerisation. The main consequence is a significant lack of reproducibility of results. The present paper analyses the problem and its practical influence, describes a simple diborane-degradation model, proposes certain approaches based thereon and shows experimental results illustrating the validity of the procedures suggested. It is finally concluded that the application of this simple model is a straightforward and effective way to control diborane doping level in p-type amorphous- or microcrystalline silicon.