• Title of article

    Advances in monocrystalline Si thin film solar cells by layer transfer

  • Author/Authors

    Bergmann، نويسنده , , R.B and Berge، نويسنده , , C and Rinke، نويسنده , , T.J. and Schmidt، نويسنده , , J and Werner، نويسنده , , J.H، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    213
  • To page
    218
  • Abstract
    The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
  • Keywords
    SI , solar cells , diffusion length , Light trapping , Device modeling
  • Journal title
    Solar Energy Materials and Solar Cells
  • Serial Year
    2002
  • Journal title
    Solar Energy Materials and Solar Cells
  • Record number

    1478171