Title of article
Advances in monocrystalline Si thin film solar cells by layer transfer
Author/Authors
Bergmann، نويسنده , , R.B and Berge، نويسنده , , C and Rinke، نويسنده , , T.J. and Schmidt، نويسنده , , J and Werner، نويسنده , , J.H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
213
To page
218
Abstract
The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
Keywords
SI , solar cells , diffusion length , Light trapping , Device modeling
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2002
Journal title
Solar Energy Materials and Solar Cells
Record number
1478171
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