Author/Authors :
Niira، نويسنده , , K and Senta، نويسنده , , K and Hakuma، نويسنده , , H and Komoda، نويسنده , , M and Okui، نويسنده , , H and Fukui، نويسنده , , K and Arimune، نويسنده , , H and Shirasawa، نويسنده , , K، نويسنده ,
Abstract :
Poly-Si film prepared by PECVD method showed low ESR spin density of around 1E16/cm3 and poly-Si film prepared by Cat-CVD method showed relatively low ESR spin density of around 1E17/cm3. The cell using PECVD poly-Si film as a photo-active layer showed an intrinsic cell efficiency of 7.75%. Light confinement micro-structure was introduced to the cell applying RIE method to the glass substrate surface and enhancement of Jsc was observed.
Keywords :
RIE , cat-CVD , Poly-Si , PECVD
