In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H2 gas molecules. In situ chamber cleaning using only H2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost.