Device simulation and modeling of microcrystalline silicon solar cells

Device modeling for p–i–n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (Voc) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (Jsc) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 μm grain size and well-passivated condition with 10 μm thick i-layer and optical confinement.