Title of article
Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films
Author/Authors
Tanaka، نويسنده , , Tooru and Yamaguchi، نويسنده , , Toshiyuki and Wakahara، نويسنده , , Akihiro and Yoshida، نويسنده , , Akira and Taniguchi، نويسنده , , Ryoichi and Matsuda، نويسنده , , Yatsuka and Fujishiro، نويسنده , , Masatoshi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
115
To page
120
Abstract
Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3×1016 cm−3, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×1016 e cm−2. As the electron fluence exceeded 1017 e cm−2, both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm−1, which is slightly lower than that of III–V compound materials.
Keywords
Radiation damage , Thin film , solar cell , CUINSE2 , Electrical property
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478335
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