Novel external field source by localization of electrons for improvement of solar cells

For drift field generation IS structures with a fixed positive charge were developed in the 1970s and employed on solar cells. While many papers were published about the positively charged IS structure there has been little interest in a negatively charged IS structure (Proceedings of the 18th IEEE PVSC, Las Vegas, 1985, p. 1752). In comparison to solar cells with back surface field such structures could improve conversion efficiency more significantly. They also open the way to novel-field-effect-supported solar cells on n-type silicon. per represents results of the preparation and characterization of the I−S structure on Silicon (Si) consisting of a layer compound AlF3||SiO2 on Si, a discussion of the phenomena encountered and respective conclusions.