Author/Authors :
Tyagi، نويسنده , , R and Bal، نويسنده , , M and Singh، نويسنده , , M and Mohan، نويسنده , , Satish and Haldar، نويسنده , , T and Naik، نويسنده , , A and Singh، نويسنده , , Premveer and Husain، نويسنده , , M and Agarwal، نويسنده , , S.K، نويسنده ,
Abstract :
Hydrogen passivation on MOCVD grown p-GaAs epilayers on Ge substrate have been studied by plasma and catalytic hydrogenation and the results were compared. The conversion efficiency of the GaAs/Ge solar cells was found to increase by ∼10% after catalytic hydrogenation at AM1.5. This increase in efficiency is probably due to passivation of surface dangling bonds.
Keywords :
GaAs/Ge solar cell , Catalytic hydrogenation , MOCVD , efficiency , PLASMA
