Title of article
Catalytic hydrogenation for improvement of GaAs/Ge solar cell efficiency
Author/Authors
Tyagi، نويسنده , , R and Bal، نويسنده , , M and Singh، نويسنده , , M and Mohan، نويسنده , , Satish and Haldar، نويسنده , , T and Naik، نويسنده , , A and Singh، نويسنده , , Premveer and Husain، نويسنده , , M and Agarwal، نويسنده , , S.K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
257
To page
261
Abstract
Hydrogen passivation on MOCVD grown p-GaAs epilayers on Ge substrate have been studied by plasma and catalytic hydrogenation and the results were compared. The conversion efficiency of the GaAs/Ge solar cells was found to increase by ∼10% after catalytic hydrogenation at AM1.5. This increase in efficiency is probably due to passivation of surface dangling bonds.
Keywords
GaAs/Ge solar cell , Catalytic hydrogenation , MOCVD , efficiency , PLASMA
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478618
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