Synthesis of cobalt–silicon oxide thin films

Silicon–cobalt oxide thin films were prepared by the dipping sol–gel process. Samples with different number of dipping–annealing cycles were prepared. Some data regarding the precursor sol are given from small angle X-ray scattering characterization. Composition, structure, surface morphology and optical properties are obtained from X-ray diffraction, reflectance, transmittance, FTIR, scanning electron microscopy and EDX spectroscopy measurements. The silicon–cobalt oxide thin films prepared in this work are mostly amorphous. They have a high absorption coefficient in the visible and infrared regions. A refractive index from 2.15 to 1.79 (at 1200 nm wavelength), and a band gap between 3.73 and 3.68 eV with increasing film thickness were measured in the films. Sol–gel prepared Si–Co oxide thin films could be well suited for use in photothermal solar collectors.