Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Polycrystalline thin films of CuIn1−xGaxTe2 have been deposited by flash evaporation on Corning glass 7059 substrates at Ts=200°C. Hall and resistivity measurements have been carried out down to 77 K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at Ta=450°C have showed a broad band emission between 0.98 and 1.12 eV in which the main peak appears at 1.05 eV (at 4.2 K).