Title of article
Material and solar cell research in microcrystalline silicon
Author/Authors
Shah، نويسنده , , A.V and Meier، نويسنده , , J and Vallat-Sauvain، نويسنده , , E and Wyrsch، نويسنده , , N and Kroll، نويسنده , , U and Droz، نويسنده , , C and Graf، نويسنده , , U، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
23
From page
469
To page
491
Abstract
This contribution describes the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchâtel in connection with deposition of μc-Si:H layers by very high frequency glow discharge deposition is related in detail. Corresponding layer properties w.r.t. material microstructure, hydrogen content, stability and electronic transport are referred to. Basic properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related: Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (Voc, Jsc and FF) obtained by IMT Neuchâtel and by other laboratories are listed and commented; the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. “micromorph” silicon tandem solar cells, are described, together with recent developments on the research and industrial front.
Keywords
material properties , Single-junction solar cells , Tandem solar cells , Electronic transport , Plasma deposition , microcrystalline silicon
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478807
Link To Document