Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films

Al2O3-coated TiO2 porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in CuI by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight.