Growth and characterization of 240 kg multicrystalline silicon ingot grown by directional solidification

Multicrystalline silicon ingot of 69 cm square cross section, 240 kg has been produced by a process in which graphite pedestal moves away from the heater with crystal growing. The material has shown consistency and uniformity in the properties required for large-scale production. Fabrication of the solar cell with this material shows cell performance very close to that of single-crystalline silicon material.