The enhancement of homogeneity in the textured structure of silicon crystal by using ultrasonic wave in the caustic etching process

The presence of the ultrasonic wave in the caustic etching process enhances the etching rate and results in a finer, and more homogeneous, textured structure. The silicon solar cell, texture etched for 20 min at 60°C in the caustic solution with ultrasonic wave, gives higher cell performance than the cell texture etched for 40 min at 70°C without ultrasonic wave. This comparison indicates a strong possibility of lowering the texturing cost of the silicon crystal by saving time and expensive chemicals normally employed in the texturisation of the crystalline silicon.