Title of article
Effects of annealing on the properties of SnSe films
Author/Authors
Zainal، نويسنده , , Zulkarnain and Nagalingam، نويسنده , , Saravanan and Kassim، نويسنده , , Anuar and Hussein، نويسنده , , Mohd.Zobir and Yunus، نويسنده , , Wan Mahmood Mat Yunus، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
8
From page
261
To page
268
Abstract
Tin selenide thin films were deposited potentiostatically from an unstirred aqueous solution containing Sn-EDTA and Na2SeO3 onto indium-doped tin oxide glass substrates. The difference in the structural and compositional properties of the film before and after heat treatment in a nitrogen atmosphere were studied. The as-grown and treated films were characterised using various techniques such as X-ray diffractometry, scanning electron microscopy and energy-dispersive X-ray analysis. Photoactivity of the samples was studied using linear sweep voltammetry. An annealing temperature of 150°C was found to be the optimum temperature.
Keywords
Tin selenide , Photoelectrochemical cell , Thin film , Electrodeposition
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2004
Journal title
Solar Energy Materials and Solar Cells
Record number
1479093
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