Title of article
Charge transport generation-recombination mechanism in Au/n-CdZnTe diodes
Author/Authors
Kosyachenko، نويسنده , , L.A. and Maslyanchuk، نويسنده , , O.L. and Motushchuk، نويسنده , , V.V. and Sklyarchuk، نويسنده , , V.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
9
From page
65
To page
73
Abstract
Diode structures fabricated by vacuum evaporation of Au onto n-type Cd1−xZnxTe (x=0.05) single crystals (ρ=0.1–0.3 Ω cm) are investigated. The current–voltage characteristics of the diode are shown to be interpreted quantitatively in terms of the Sah–Noyce–Shockley theory for generation-recombination in the space-charge region of the diode.
Keywords
CdZnTe , photodiode , charge transport
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2004
Journal title
Solar Energy Materials and Solar Cells
Record number
1479161
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