Title of article :
Epitaxial lift-off process for GaAs solar cell on Si substrate
Author/Authors :
Taguchi، نويسنده , , Hironori and Soga، نويسنده , , Tetsuo and Jimbo، نويسنده , , Takashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
This research has established the process to transplant GaAs solar cells from GaAs substrate to Si substrate without degrading the conversion efficiency. The conversion efficiency of GaAs solar cell bonded to Si substrate using epitaxial lift-off process is almost the same as that grown on GaAs substrate and is superior to that grown on Si substrate by heteroepitaxy.
Keywords :
GaAs on Si , Bonding , Epitaxial lift-off
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells