Title of article
Epitaxial lift-off process for GaAs solar cell on Si substrate
Author/Authors
Taguchi، نويسنده , , Hironori and Soga، نويسنده , , Tetsuo and Jimbo، نويسنده , , Takashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
85
To page
89
Abstract
This research has established the process to transplant GaAs solar cells from GaAs substrate to Si substrate without degrading the conversion efficiency. The conversion efficiency of GaAs solar cell bonded to Si substrate using epitaxial lift-off process is almost the same as that grown on GaAs substrate and is superior to that grown on Si substrate by heteroepitaxy.
Keywords
GaAs on Si , Bonding , Epitaxial lift-off
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2005
Journal title
Solar Energy Materials and Solar Cells
Record number
1479460
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