Characterization of TiO2 deposited on textured silicon wafers by atmospheric pressure chemical vapour deposition

Thin films of TiO2 have been deposited on textured silicon wafers. The technique used has been atmospheric pressure chemical vapour deposition (APCVD). This technique is interesting for its high production rate and low cost. The film structure has been studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the “as-deposited” film is amorphous and inhomogeneous, and it presents a double layer. We suggest that the inner one is constituted by silicate and the outer layer corresponds to the TiO2 film. After heat treatment, the outer layer undergoes a phase transition from amorphous phase to crystalline. The TEM images show small anatase crystals.