Title of article :
Photoelectric investigations of charge-transferring metal-doped [60] fullerenes
Author/Authors :
Liu، نويسنده , , Xiu-Ling Jia، نويسنده , , Yajie and Guo، نويسنده , , Lijun and Wang، نويسنده , , Gongming، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Physical Jet Deposition method was used to form the C60Ni films, one of the metal-doped [60] fullerenes films, which were made into the Al/C60Ni/ ITO layered structure photovoltaic cells. The photovoltaic effect and the current–voltage characteristic in dark with the devices were taken. Compared with the Al/C60/ITO layer structure devices, the enhancement of photovoltage and rectification rate of C60Ni devices was found. Possible reasons were discussed.
Keywords :
Photovoltaic effect , Interface dipolar electrical field
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells