Title of article
Photoelectric investigations of charge-transferring metal-doped [60] fullerenes
Author/Authors
Liu، نويسنده , , Xiu-Ling Jia، نويسنده , , Yajie and Guo، نويسنده , , Lijun and Wang، نويسنده , , Gongming، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
5
To page
10
Abstract
Physical Jet Deposition method was used to form the C60Ni films, one of the metal-doped [60] fullerenes films, which were made into the Al/C60Ni/ ITO layered structure photovoltaic cells. The photovoltaic effect and the current–voltage characteristic in dark with the devices were taken. Compared with the Al/C60/ITO layer structure devices, the enhancement of photovoltage and rectification rate of C60Ni devices was found. Possible reasons were discussed.
Keywords
Photovoltaic effect , Interface dipolar electrical field
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2005
Journal title
Solar Energy Materials and Solar Cells
Record number
1479681
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