Measurement of residual stress in EFG ribbons using a phase-shifting IR photoelastic method

This paper reports on the measurement of residual stress in EFG silicon ribbons for solar cell applications using the phase-shifting infrared (IR) photoelastic method. The samples analysed were wafers cut from EFG octagons with 100 mm face width and from EFG 125 mm face-width octagon under development. Experimental results show that the distribution of residual stress in both types of samples is similar, within measurement uncertainties. The average residual stress in the samples is about 8 MPa. Maximum stresses of around 30 MPa are associated with twin and grain boundaries. Significant variations of stress along the growth direction, possibly related to buckling, were also measured.