Minimization of the effect of the collecting grid in a solar cell based silicon

The solar cells collecting grids present a serious problem and more particularly under solar concentration. Our contribution in this article is to seek the best compromise between shadow effect and series resistance effect. The cell considered here is of Si (silicon) type, n+p with circular geometry (radius a = 4.9 cm ), a silver metallization ( ρ M = 1.6 × 1 0 - 6 Ω cm ), and a contact resistivity of ρ C = 1 0 - 5 Ω cm . Our calculations are made under the condition of AM1.5 with 1 sun concentration. rious power losses caused by this grid are:• due to the grid shadow, in grain boundaries due to the metal/semiconductor contact, dissipated in the resistance of layer between bars, and in the grid metallization. marize the results of our model by:• sheet resistance ρS=10 Ω/□:τoop(%) (optimum shadow fraction)=τcop(%) (optimum conduction fraction)=5.086% leading to θoptimum=0.0652 rad. sheet resistance ρS=20 Ω/□:τoop(%)=τcop(%)=5.338% leading to θoptimum=0.05883 rad. sheet resistance ρS=50 Ω/□:τoop(%)=τcop(%)=5.949%, θoptimum=0.0500 rad.