Author/Authors :
Sharafutdinov، نويسنده , , R.G. and Khmel، نويسنده , , S.Ya. and Shchukin، نويسنده , , V.G. and Ponomarev، نويسنده , , M.V. and Baranov، نويسنده , , E.A. and Volkov، نويسنده , , A.V. and Semenova، نويسنده , , O.I. and Fedina، نويسنده , , L.I. and Dobrovolsky، نويسنده , , P.P. and Kolesov، نويسنده , , B.A.، نويسنده ,
Abstract :
A novel gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet. We report on the results of applying the method for growth of amorphous, microcrystalline, homoepitaxial silicon films and transparent conducting oxides (ZnO:Al). Our method demonstrates the high deposition rates (up to 5 nm/s) of microcrystalline Si films at low temperatures on large area substrates (area up to 15×15 cm2).
Keywords :
Gas-jet electron beam plasma CVD , Amorphous Si , Microcrystalline Si , Epitaxial Si , TCO
