Title of article
Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources
Author/Authors
Qiu، نويسنده , , K. L. Hayden، نويسنده , , A.C.S. and Mauk، نويسنده , , M.G. and Sulima، نويسنده , , O.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
14
From page
68
To page
81
Abstract
Electric power generation using InGaAsSb and GaSb thermophotovoltaic (TPV) cells was investigated in a gas-fired heating furnace. Electric output characteristics of the TPV cells in the combustion-driven radiant sources are presented. For the InGaAsSb cells, open circuit voltage was higher than 300 mV at a short circuit current density above 1 A/cm2. The short circuit current of the InGaAsSb cells increased more rapidly than that of the GaSb cells in radiator temperature range 930–1215 °C. A mathematical model for the TPV devices was developed to describe the effect of cell bandgap and radiator temperature on electric power output and cell efficiency. Also, the design aspects of the combustion-driven TPV systems are discussed.
Keywords
TPV , Radiator , COMBUSTION , model
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2006
Journal title
Solar Energy Materials and Solar Cells
Record number
1480061
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