Title of article :
Optical characterization of a-C:N thin films deposited by RF sputtering
Author/Authors :
Ech-chamikh، نويسنده , , E. and Essafti، نويسنده , , A. and Azizan، نويسنده , , M. and Ijdiyaou، نويسنده , , Y.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
1424
To page :
1428
Abstract :
In this work we present the main results of the optical properties study of amorphous carbon nitride (a-C:N) thin films prepared by reactive radio frequency (RF) sputtering. The a-C:N films were deposited, at room temperature, onto glass substrates, from a graphite target, in a pure nitrogen plasma. During the deposition, the pressure of nitrogen and the power density were maintained at 10−2 mbar and 0.79 W cm−2, respectively. Optical properties of these films were deduced from optical transmission spectra in the ultraviolet–visible–near infrared (UV–Vis–NIR) range. The refractive index follows well the Cauchy law with an extrapolated value of 1.68 in the far IR region. The optical band gap of the a-C:N films is about 1.2 eV. This value is relatively high in comparison with that of amorphous carbon films (0.8 eV) obtained in similar conditions. The incorporation of nitrogen in the amorphous carbon network leads to an increase of the optical band gap.
Keywords :
Optical band gap , RF sputtering , Refractive index , Carbon nitride
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2006
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1480372
Link To Document :
بازگشت